Flat conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell heterojunction

Comparison between the Efficiency of Heterojunction Thin Film InGaP\GaAs\Ge and InGaP\GaAs Solar Cell

Abstract—This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silva...

Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

Innovative Elastic Thin-Film Solar Cell Structures

The Effect of pH on the Optical Band Gap of PbSe Thin Film with Usability in the Quantum Dot Solar Cell and Photocatalytic Activity

This study was an attempt to provide a simple solution processed synthesis route for Lead Selenide (PbSe) nanostructure thin films using the chemical bath deposition (CBD) method which is commercially available in inexpensive precursors. In the CBD method, the preparation parameters play a considerable role and determine the nature of the final product formed. Known as two main factors, the eff...

Transparent p-n Heterojunction Thin Film Diodes

Transparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage char...